BUK9628-55A,118 NXP Semiconductors, BUK9628-55A,118 Datasheet - Page 8

• Manufacturer Part Number: BUK9628-55A,118
• Description: MOSFET N-CH 55V 42A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9628-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 1725pF @ 25V
• Power - Max: 99W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 42 A
• Power Dissipation: 99000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056266118; BUK9628-55A /T3; BUK9628-55A /T3

Philips Semiconductors
9397 750 07683
Product specification
Fig 13. Transfer characteristics: drain current as a
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values.
V
V
GS
DS
function of gate-source voltage; typical values.
= 25 V
= 0 V
100
I D
(A)
80
60
40
20
0
0
1
2
T j = 175 o C
3
T j = 25 o C
4
100
I S
(A)
5
80
60
40
20
V GS (V)
0
03na81
0
6
Rev. 01 — 18 January 2001
0.2
0.4
BUK9528-55A; BUK9628-55A
T j = 175 o C
0.6
0.8
Fig 14. Gate-source voltage as a function of turn-on
1.0
T j = 25 o C
T
j
= 25 C; I
1.2
gate charge; typical values.
V GS
(V)
1.4
6
5
4
3
2
1
0
V SD (V)
03na82
0
D
1.6
= 25 A
10
TrenchMOS™ logic level FET
V DD = 14 V
© Philips Electronics N.V. 2001. All rights reserved.
20
V DD = 44 V
Q G (nC)
03na83
30
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