PSMN085-150K,518 NXP Semiconductors, PSMN085-150K,518 Datasheet - Page 10

• Manufacturer Part Number: PSMN085-150K,518
• Description: MOSFET N-CH 150V 4.1A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN085-150K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056596518; PSMN085-150K /T3; PSMN085-150K /T3

NXP Semiconductors
8. Revision history
Table 7.
PSMN085-150K_2
Product data sheet
Document ID
PSMN085_150K_2
Modifications:
PSMN085_150K-01
(9397 750 07898)
Revision history
20100301
Release date
20010116
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product specification
Rev. 02 — 1 March 2010
N-channel TrenchMOS SiliconMAX standard level FET
Change notice
-
-
PSMN085-150K
Supersedes
PSMN085_150K-01
-
© NXP B.V. 2010. All rights reserved.
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