PSMN085-150K,518 NXP Semiconductors, PSMN085-150K,518 Datasheet - Page 7

• Manufacturer Part Number: PSMN085-150K,518
• Description: MOSFET N-CH 150V 4.1A SOT96-1
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN085-150K,518

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 85 mOhm @ 3.5A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 1310pF @ 25V
• Power - Max: 3.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.085 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 3.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934056596518; PSMN085-150K /T3; PSMN085-150K /T3

NXP Semiconductors
PSMN085-150K_2
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(Ω)
DSon
V
0.25
0.15
0.05
(V)
0.2
0.1
GS
10
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
T
3.5 V
D
j
= 4.1 A
= 25 °C
4 V
10
15
V
DD
= 30 V 75 V
V
GS
= 4.5 V
30
20
120 V
Q
T
All information provided in this document is subject to legal disclaimers.
G
j
(nC)
= 25 °C
I
D
03ae22
03ae17
10 V
(A)
5 V
45
30
Rev. 02 — 1 March 2010
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
C
C
C
(pF)
oss
iss
rss
10
10 3
10
a
10
,
,
3
2
1
0
4
2
10
-60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
−1
0
1
PSMN085-150K
60
10
120
© NXP B.V. 2010. All rights reserved.
V
DS
03aa30
T
C
C
C
(V)
j
03ae21
( ° C)
oss
rss
iss
10
180
2
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