BUK9675-55A,118 NXP Semiconductors, BUK9675-55A,118 Datasheet - Page 6

• Manufacturer Part Number: BUK9675-55A,118
• Description: MOSFET N-CH 55V 20A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9675-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 68 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 643pF @ 25V
• Power - Max: 62W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.068 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 20 A
• Power Dissipation: 62000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056269118; BUK9675-55A /T3; BUK9675-55A /T3

Table 5:
T
Philips Semiconductors
9397 750 07831
Product specification
Symbol
Source-drain diode
V
t
Q
rr
j
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
SD
r
= 25 C unless otherwise specified
T
T
j
j
= 25 C; t
= 25 C
function of drain-source voltage; typical values.
of drain current; typical values.
(m )
R DSon
I D
Characteristics
(A)
60
40
20
Parameter
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
0
180
160
140
120
100
80
60
40
0
0
p
= 300 s
2
3 3.2
10
3.4
…continued
4
V GS (V) =
20
3.6
3.8 4
6
30
8
VGS (V) =
8
V DS (V)
40
Conditions
I
Figure 15
I
V
S
S
5
GS
I D (A)
= 15 A; V
= 20 A; dI
10
10
= 10 V; V
4
3
7
6
5
2.2
50
Rev. 01 — 9 February 2001
GS
S
BUK9575-55A; BUK9675-55A
/dt = 100 A/ s
= 0 V;
DS
= 30 V
Fig 6. Drain-source on-state resistance as a function
Fig 8. Normalized drain-source on-state resistance
T
j
a
= 25 C; I
=
of gate-source voltage; typical values.
factor as a function of junction temperature.
a
--------------------------- -
R
R DSon
DSon 25 C
2.2
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
(m )
120
100
R
2
1
0
80
60
40
-60
DSon
D
2
Min
= 10 A
-20
4
20
TrenchMOS™ logic level FET
Typ
0.85
33
60
60
6
© Philips Electronics N.V. 2001. All rights reserved.
100
8
Max
1.2
140
T j ( o C)
V GS (V)
03aa28
180
10
Unit
V
ns
nC
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