BUK9675-100A /T3 NXP Semiconductors, BUK9675-100A /T3 Datasheet
BUK9675-100A /T3
Specifications of BUK9675-100A /T3
Related parts for BUK9675-100A /T3
BUK9675-100A /T3 Summary of contents
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... BUK9675-100A N-channel TrenchMOS logic level FET Rev. 04 — 19 April 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... °C mb ≤ 14 sup °C; unclamped GS j(init) All information provided in this document is subject to legal disclaimers. Rev. 04 — 19 April 2011 BUK9675-100A N-channel TrenchMOS logic level FET Graphic symbol mbb076 Version SOT404 Min Max - 100 - 100 ...
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... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 04 — 19 April 2011 BUK9675-100A N-channel TrenchMOS logic level FET 100 150 ≥ Normalized continuous drain current as a ...
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... P 0.1 −1 10 0.05 0.02 0 −2 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 19 April 2011 BUK9675-100A N-channel TrenchMOS logic level FET Min Typ - - - 50 003aaf173 t p δ −2 − (s) p Max Unit 1 ...
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... ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 19 April 2011 BUK9675-100A N-channel TrenchMOS logic level FET Min Typ Max 100 - - 0 1 2.3 ...
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... V (V) GS Fig 9. 003aaf179 (V) GS Fig 11. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 04 — 19 April 2011 BUK9675-100A N-channel TrenchMOS logic level FET 140 4 DS(on) (mΩ) 120 100 °C j Drain-source on-state resistance as a function of drain current ...
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... W DSS (%) = 25 ° 1.2 1.6 V (V) SDS Fig 17. Normalised drain-source avalanche energy as a All information provided in this document is subject to legal disclaimers. Rev. 04 — 19 April 2011 BUK9675-100A N-channel TrenchMOS logic level FET −1 −2 − typical −4 −5 −6 0 0 °C; V ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 19 April 2011 BUK9675-100A N-channel TrenchMOS logic level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2011. All rights reserved. SOT404 ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9675-100A v.4 20110419 • Modifications: Various changes to content. BUK9675-100A v.3 20110328 BUK9675-100A Product data sheet Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. ...
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... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 04 — 19 April 2011 BUK9675-100A N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 19 April 2011 BUK9675-100A N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: BUK9675-100A ...