BUK9215-55A,118 NXP Semiconductors, BUK9215-55A,118 Datasheet - Page 2

• Manufacturer Part Number: BUK9215-55A,118
• Description: MOSFET N-CH 55V 55A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9215-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 2916pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0136 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 62 A
• Power Dissipation: 115000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056699118; BUK9215-55A /T3; BUK9215-55A /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
BUK9215-55A
Product data sheet
Pin
1
2
3
mb
Type number
BUK9215-55A
Symbol Description
G
D
S
D
Pinning information
Ordering information
gate
drain
source
mounting base; connected to drain
Table 1.
[1]
Package
Name
DPAK
Symbol
Avalanches ruggedness
E
Dynamic characteristics
Q
DS(AL)S
GD
Current is limited by power dissipation chip rating.
Quick reference data
Parameter
non-repetitive
drain-source avalanche
energy
gate-drain charge
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 7 February 2011
Simplified outline
…continued
Conditions
I
R
T
V
V
see
SOT428 (DPAK)
D
j(init)
GS
DS
GS
= 62 A; V
Figure 9
= 44 V; T
= 5 V; I
= 50 Ω; V
1
= 25 °C; unclamped
mb
2
D
3
sup
N-channel TrenchMOS logic level FET
= 25 A;
j
GS
= 25 °C;
≤ 55 V;
= 5 V;
BUK9215-55A
Graphic symbol
Min
-
-
mbb076
G
© NXP B.V. 2011. All rights reserved.
Typ
-
20
Version
SOT428
D
S
Max Unit
211
-
2 of 14
mJ
nC