BUK9215-55A,118 NXP Semiconductors, BUK9215-55A,118 Datasheet - Page 9

• Manufacturer Part Number: BUK9215-55A,118
• Description: MOSFET N-CH 55V 55A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9215-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 13.6 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 48nC @ 5V
• Input Capacitance (ciss) @ Vds: 2916pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0136 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 62 A
• Power Dissipation: 115000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056699118; BUK9215-55A /T3; BUK9215-55A /T3

NXP Semiconductors
BUK9215-55A
Product data sheet
Fig 13. Input, output and reverse transfer capacitances
(pF)
C
6000
5000
4000
3000
2000
1000
0
10
as a function of drain-source voltage; typical
values
C
C
C
−2
iss
oss
rss
10
−1
1
10
All information provided in this document is subject to legal disclaimers.
V
DS
03nb63
(V)
Rev. 02 — 7 February 2011
10
2
Fig 14. Reverse diode current; typical value
(A)
I
S
100
80
60
40
20
0
0.0
N-channel TrenchMOS logic level FET
0.5
T
j
= 175 °C
BUK9215-55A
1.0
T
j
V
© NXP B.V. 2011. All rights reserved.
= 25 °C
SD
(V)
03nb56
1.5
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