BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet
BUK7219-55A,118
Specifications of BUK7219-55A,118
BUK7219-55A /T3
BUK7219-55A /T3
Related parts for BUK7219-55A,118
BUK7219-55A,118 Summary of contents
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... BUK7219-55A TrenchMOS™ standard level FET Rev. 01 — 02 October 2000 1. Description N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ Product availability: BUK7219-55A in SOT428 (D-PAK). 2. Features TrenchMOS™ technology Q101 compliant 175 C rated Standard level compatible. 3. Applications Automotive and general purpose power switching: ...
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... Figure 2 and 100 Figure pulsed Figure Figure pulsed unclamped inductive load starting Rev. 01 — 02 October 2000 BUK7219-55A Typ Max Unit 114 W 175 Min Max Unit [1] 250 A 114 W 55 +175 C 55 +175 250 A 120 mJ © Philips Electronics N.V. 2000. All rights reserved. ...
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... Product specification 03aa16 120 I der 100 150 175 200 der Fig 2. Normalized continuous drain current as a function of mounting base temperature. RDSon = VDS D. Rev. 01 — 02 October 2000 BUK7219-55A TrenchMOS™ standard level FET 03aa24 (%) 100 125 150 175 4 ------------------ - 100 03na39 ...
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... Transient thermal impedance Fig 4. Transient thermal impedance from junction to mounting base as a function of 9397 750 07575 Product specification Conditions Figure th(j-mb) (k/W) 1 0.1 0. pulse duration. Rev. 01 — 02 October 2000 BUK7219-55A TrenchMOS™ standard level FET Value Unit 71.4 K/W 1.3 K/W 03na40 ...
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... 175 MHz; Figure 1 measured from drain lead from package to centre of die measured from source lead from package to source bond pad Rev. 01 — 02 October 2000 BUK7219-55A TrenchMOS™ standard level FET Typ Max Unit 4 500 A 2 100 1581 2108 pF 372 ...
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... 03na36 R DSon (mOhms 4 ( Fig 6. On-state resistance: typical values. 03na37 ( Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. Rev. 01 — 02 October 2000 BUK7219-55A TrenchMOS™ standard level FET Min Typ Max 0.85 1.2 48 106 03na34 ( 03aa28 2 1.8 1.6 1.4 1 ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage. 03na35 3000.0 2500.0 2000.0 1500.0 1000.0 80 100 MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 02 October 2000 BUK7219-55A TrenchMOS™ standard level FET 03aa35 min typ max ...
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... Fig 14. Turn-on gate charge characteristics; typical values. 100 175 0.0 0.2 0.4 0.6 0.8 1.0 1 Rev. 01 — 02 October 2000 BUK7219-55A TrenchMOS™ standard level FET 03na33 14V 44V (nC 03na32 1.4 1 (V) © Philips Electronics N.V. 2000. All rights reserved. ...
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... REFERENCES JEDEC EIAJ TO-252 SC-63 Rev. 01 — 02 October 2000 BUK7219-55A TrenchMOS™ standard level FET max. min. 0.7 10.4 2.95 0.5 0.2 0.5 9.6 2.55 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20001002 - Product specification; initial version. 9397 750 07575 Product specification TrenchMOS™ standard level FET Rev. 01 — 02 October 2000 BUK7219-55A © Philips Electronics N.V. 2000. All rights reserved ...
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... Rev. 01 — 02 October 2000 BUK7219-55A TrenchMOS™ standard level FET Philips Semiconductors assumes © ...
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... United Kingdom: Tel. +44 208 730 5000, Fax. +44 208 754 8421 United States: Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: Tel. +381 11 3341 299, Fax. +381 11 3342 553 Internet: http://www.semiconductors.philips.com (SCA70) Rev. 01 — 02 October 2000 BUK7219-55A © Philips Electronics N.V. 2000. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 02 October 2000 Document order number: 9397 750 07575 Printed in The Netherlands BUK7219-55A TrenchMOS™ standard level FET ...