BUK7219-55A,118 NXP Semiconductors, BUK7219-55A,118 Datasheet - Page 4

• Manufacturer Part Number: BUK7219-55A,118
• Description: MOSFET N-CH 55V 55A DPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7219-55A,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 19 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2108pF @ 25V
• Power - Max: 114W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.019 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55 A
• Power Dissipation: 114000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056242118; BUK7219-55A /T3; BUK7219-55A /T3

7. Thermal characteristics
Table 4:
Philips Semiconductors
9397 750 07575
Product specification
Symbol
R
R
th(j-a)
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to ambient
thermal resistance from junction to mounting
base
7.1 Transient thermal impedance
Fig 4. Transient thermal impedance from junction to mounting base as a function of
Z th(j-mb)
pulse duration.
(k/W)
0.01
0.1
10
1
10
-6
Rev. 01 — 02 October 2000
10
-5
Conditions
Figure 4
10
-4
10
-3
10
-2
TrenchMOS™ standard level FET
10
-1
BUK7219-55A
© Philips Electronics N.V. 2000. All rights reserved.
1
P
Value
71.4
1.3
t p
T
10
t p (s)
=
03na40
t p
T
t
10
Unit
K/W
K/W
2
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