BUK7528-55A,127 NXP Semiconductors, BUK7528-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK7528-55A,127
• Description: MOSFET N-CH 55V 42A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7528-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 1165pF @ 25V
• Power - Max: 99W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 99000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056257127; BUK7528-55A; BUK7528-55A

Philips Semiconductors
June 2000
TrenchMOS
Standard level FET
VGS
0
Fig.17. Avalanche energy test circuit.
W
DSS
RGS
0.5 LI
transistor
D
2
BV
DSS
L
VDS
BV
T.U.T.
DSS
shunt
R 01
V
DD
-
+
-ID/100
VDD
6
VGS
0
Fig.18. Switching test circuit.
RG
RD
VDS
T.U.T.
Product specification
BUK7528-55A
BUK7628-55A
-
+
Rev 1.100
VDD