BUK7528-100A NXP Semiconductors, BUK7528-100A Datasheet

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

BUK7528-100A

Manufacturer Part Number
BUK7528-100A
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.
Table 1.
Symbol
V
I
P
Static characteristics
R
Avalanche ruggedness
E
D
DS
tot
DS(AL)S
DSon
BUK7528-100A
N-channel TrenchMOS standard level FET
Rev. 2 — 26 April 2011
AEC Q101 compliant
Automotive and general purpose
power switching
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
non-repetitive
drain-source avalanche
energy
Conditions
T
T
V
T
I
R
T
D
j
mb
j
j(init)
GS
GS
≥ 25 °C; T
= 25 °C
= 30 A; V
= 25 °C
= 10 V; I
= 50 Ω; V
= 25 °C; unclamped
sup
j
D
≤ 175 °C
GS
= 25 A;
≤ 25 V;
= 5 V;
Low conduction losses due to low
on-state resistance
Product data sheet
Min Typ Ma
-
-
-
-
-
-
-
-
20
-
x
100 V
47
166 W
28
45
Uni
t
A
mΩ
mJ

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BUK7528-100A Summary of contents

Page 1

... BUK7528-100A N-channel TrenchMOS standard level FET Rev. 2 — 26 April 2011 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...

Page 2

... Simplified outline SOT78A (TO-220AB) Description plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A Graphic symbol mbb076 Version SOT78A © NXP B.V. 2011. All rights reserved ...

Page 3

... D (%) 150 200 0 T (° Fig 2. Continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A N-channel TrenchMOS standard level FET Min - - - -55 - Ω 003aaf150 50 100 ...

Page 4

... −3 −2 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A N-channel TrenchMOS standard level FET 100 140 unclamped inductive load D Normalised drain-source non-repetitive avalanche energy rating; avalanche energy as a ...

Page 5

... P 0.02 − −3 10 −7 −6 −5 −4 −3 − All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A N-channel TrenchMOS standard level FET Min Typ - - - 60 003aaf156 t p δ − (s) p ...

Page 6

... ° /dt = -100 A/µ - ° All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A Min Typ Max Unit 100 - - 4 ...

Page 7

... V (V) GS Fig 10. Transfer characteristics: drain current as a 003aaf162 V 100 200 T (°C) j Fig 12. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A N-channel TrenchMOS standard level FET 65 5.5 6.0 DS(on) (mΩ ° ...

Page 8

... Fig 14. Input, output and reverse transfer capacitances 003aaf166 100 150 Q (nC) G Fig 16. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A N-channel TrenchMOS standard level FET iss (nF oss 2 C ...

Page 9

... 0.7 15.8 6.4 10.3 2.54 0.4 15.2 5.9 9.7 REFERENCES JEDEC JEITA 3-lead TO-220AB SC-46 All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A N-channel TrenchMOS standard level FET mounting base ( max. 15.0 3.30 3.8 3.0 3.0 13.5 2.79 3.6 2.7 EUROPEAN PROJECTION ...

Page 10

... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number BUK7528-100A separated from data sheet BUK7528_7628-100A_1. Product specification All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A ...

Page 11

... Recommended operating conditions section (if present) or the All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A N-channel TrenchMOS standard level FET © NXP B.V. 2011. All rights reserved ...

Page 12

... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 26 April 2011 BUK7528-100A N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2011. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 26 April 2011 Document identifier: BUK7528-100A ...

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