BUK9520-55A,127 NXP Semiconductors, BUK9520-55A,127 Datasheet - Page 6

• Manufacturer Part Number: BUK9520-55A,127
• Description: MOSFET N-CH 55V 54A TO220AB
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9520-55A,127

• Package / Case: TO-220AB-3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 18 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 54A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 2210pF @ 25V
• Power - Max: 118W
• Mounting Type: Through Hole
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 54 A
• Power Dissipation: 118000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934056254127; BUK9520-55A; BUK9520-55A

NXP Semiconductors
BUK9520-55A
Product data sheet
Fig 5.
Fig 7.
(A)
I
D
(A)
I
10
10
10
10
10
10
200
180
160
140
120
100
D
80
60
40
20
−1
−2
−3
−4
−5
−6
0
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
2
V
GS
2
(V) =
4
min
8
typ
6
9
4
max
V
All information provided in this document is subject to legal disclaimers.
8
GS
V
DS
(V)
03nc91
03aa35
10
2.2
(V)
7
6
5
4
3
10
6
Rev. 02 — 8 June 2010
Fig 6.
Fig 8.
R
(mΩ)
(S)
g
DSon
fs
30
25
20
15
10
50
40
30
20
10
0
of drain current; typical values
drain current; typical values
Drain-source on-state resistance as a function
Forward transconductance as a function of
2
0
N-channel TrenchMOS logic level FET
20
4
BUK9520-55A
40
6
60
8
© NXP B.V. 2010. All rights reserved.
V
GS
I
D
03nc90
03nc88
(A)
(V)
10
80
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