BUK9Y14-40B,115 NXP Semiconductors, BUK9Y14-40B,115 Datasheet
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BUK9Y14-40B,115
Specifications of BUK9Y14-40B,115
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BUK9Y14-40B,115 Summary of contents
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... BUK9Y14-40B N-channel TrenchMOS logic level FET Rev. 03 — 2 June 2008 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using NXP High Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
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... °C; see T Figure 2 mb ≤ Ω sup °C; unclamped T j(init) see Figure ° ≤ 10 μs; pulsed ° Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET Graphic symbol mbb076 Min Max - and Figure 4 - 226 - 85 -55 175 -55 175 = 5 V ...
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... Fig 2. Normalized total power dissipation as a function of mounting base temperature (A) 10 (2) ( Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 03na19 50 100 150 T (° tot = × 100 % P tot ( 25°C ) 003aab220 10 (ms) AL © NXP B.V. 2008. All rights reserved. 200 ...
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... Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration BUK9Y14-40B_3 Product data sheet DC 10 Conditions see Figure Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 003aab218 = 10 μ 100 μ 100 (V) DS Min Typ Max - - 1.8 ...
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... see Figure 12 and ° see Figure /dt = -100 A/μ see Figure ° MHz see Figure 15 = 2.5 Ω Ω G(ext) Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET Min Typ Max 2.3 1.1 1 500 - 0. 100 - 2 100 - - 0.85 1 3.7 - ...
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... Fig 7. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aab417 ( ( 25V DS Fig 9. Transfer characteristics: drain current as a function of gate-source voltage; typical values Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 003aab415 ( 003aab416 = 175 ° ° (V) GS © NXP B.V. 2008. All rights reserved. ...
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... Fig 11. Gate-source threshold voltage as a function of junction temperature 003aab851 30 R DSon (mΩ 120 180 0 T (° Fig 13. Drain-source on-state resistance as a function of drain current; typical values Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 03ng52 max typ min 0 60 120 T (° A 003aab414 V ( 3.4 3.8 4 ...
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... Fig 15. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values ( 175 ° ° 0.0 0.2 0.4 0.6 Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET 003aab410 C iss C oss C rss − ( 003aab411 0.8 1.0 V (V) SD © NXP B.V. 2008. All rights reserved. ...
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... D 1 (1) ( max 2.2 0.9 0.25 0.30 4.10 5.0 4.20 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET detail ( 3.3 6.2 0.85 1.3 1.3 1.27 0.25 3.1 5.8 0.40 0.8 ...
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... Product data sheet Data sheet status Product data sheet V temperature operating range corrected DS Product data sheet Product data sheet Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET Change notice Supersedes BUK9Y14-40B_2 - BUK9Y14-40B_1 - - © NXP B.V. 2008. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 03 — 2 June 2008 BUK9Y14-40B N-channel TrenchMOS logic level FET © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BUK9Y14-40B_3 All rights reserved. Date of release: 2 June 2008 ...