BUK9Y14-40B,115 NXP Semiconductors, BUK9Y14-40B,115 Datasheet - Page 7

• Manufacturer Part Number: BUK9Y14-40B,115
• Description: MOSFET N-CH TRENCH 40V LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9Y14-40B,115

• Package / Case: LFPak-4
• Mounting Type: Surface Mount
• Power - Max: 85W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 21nC @ 5V
• Vgs(th) (max) @ Id: 2V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 56A
• Drain To Source Voltage (vdss): 40V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11 mOhm @ 20A, 10V
• Gate Charge Qg: 21 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 14 mOhms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: 15 V
• Continuous Drain Current: 56 A
• Power Dissipation: 85 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060172115

NXP Semiconductors
BUK9Y14-40B_3
Product data sheet
Fig 10. Sub-threshold drain current as a function of
Fig 12. Normalized drain-source on-state resistance
(A)
I
10
10
10
10
10
10
a
D
1.5
0.5
−1
−2
−3
−4
−5
−6
2
1
0
T
gate-source voltage
−60
a =
factor as a function of junction temperature
0
j
= 25 °C;V
R
DSon ( 25°C )
R
DSon
DS
0
min
= V
1
GS
60
typ
2
120
max
V
GS
003aab851
T
j
(V)
(°C)
03ng53
180
3
Rev. 03 — 2 June 2008
Fig 11. Gate-source threshold voltage as a function of
Fig 13. Drain-source on-state resistance as a function
V
R
(mΩ)
GS(th)
DSon
(V)
2.5
2.0
1.5
1.0
0.5
30
20
10
0
0
T
−60
I
junction temperature
of drain current; typical values
D
0
j
= 1 m A;V
= 25 °C
V
N-channel TrenchMOS logic level FET
GS
30
(V) = 3
DS
0
= V
GS
60
3.4
BUK9Y14-40B
60
max
min
typ
90
3.8 4
120
120
© NXP B.V. 2008. All rights reserved.
T
003aab414
j
I
D
(°C)
5
03ng52
10
15
(A)
180
150
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