BUK7611-55B,118 NXP Semiconductors, BUK7611-55B,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7611-55B,118
• Description: MOSFET N-CH 55V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7611-55B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 157W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 37nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 55V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 11 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.011 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 84 A
• Power Dissipation: 157000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057701118::BUK7611-55B /T3::BUK7611-55B /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
BUK7611-55B
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
stg
j
DS
DGR
GS
tot
DS(AL)S
Current is limited by power dissipation chip rating.
Continuous current is limited by package.
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 31 January 2011
Conditions
T
R
T
see
T
T
see
T
see
T
T
pulsed; t
I
V
D
j
mb
mb
mb
mb
mb
mb
GS
GS
≥ 25 °C; T
= 75 A; V
Figure
Figure
Figure 3
= 25 °C; V
= 100 °C; V
= 25 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 10 V; T
= 20 kΩ
p
≤ 10 µs; T
1; see
1; see
sup
j
≤ 175 °C
j(init)
GS
GS
≤ 55 V; R
GS
Figure 2
= 10 V;
= 10 V;
Figure 3
Figure 3
= 25 °C; unclamped
= 10 V; see
mb
p
= 25 °C
≤ 10 µs;
N-channel TrenchMOS standard level FET
GS
= 50 Ω;
Figure 1
BUK7611-55B
[1]
[1]
[2]
[1]
[2]
Min
-
-
-20
-
-
-
-
-
-55
-55
-
-
-
-
© NXP B.V. 2011. All rights reserved.
175
175
Max
55
55
20
84
59
75
338
157
84
75
338
173
Unit
V
V
V
A
A
A
A
W
°C
°C
A
A
A
mJ
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