BUK7628-100A,118 NXP Semiconductors, BUK7628-100A,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7628-100A,118
• Description: MOSFET N-CH 100V 47A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7628-100A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 28 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 3100pF @ 25V
• Power - Max: 166W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.028 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 166000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934055882118; BUK7628-100A /T3; BUK7628-100A /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
BUK7628-100A
Product data sheet
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
DS
DGR
GS
tot
DS(AL)S
P
(%)
der
100
80
60
40
20
0
function of mounting base temperature
Normalized total power dissipation as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
non-repetitive drain-source
avalanche energy
50
100
150
All information provided in this document is subject to legal disclaimers.
T
mb
003aaf147
(°C)
200
Conditions
T
R
T
T
T
T
T
pulsed; T
I
V
D
j
mb
mb
mb
mb
mb
Rev. 2 — 26 April 2011
GS
GS
≥ 25 °C; T
= 30 A; V
= 100 °C
= 25 °C
= 25 °C; pulsed
= 25 °C
= 25 °C
= 5 V; T
= 20 kΩ
mb
sup
= 25 °C
j(init)
j
Fig 2.
≤ 175 °C
≤ 25 V; R
= 25 °C; unclamped
(%)
I
D
100
80
60
40
20
0
mounting base temperature
V
Continuous drain current as a function of
0
GS
N-channel TrenchMOS standard level FET
GS
≥ 5 V
= 50 Ω;
50
BUK7628-100A
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
150
© NXP B.V. 2011. All rights reserved.
T
mb
003aaf150
175
175
Max
100
100
20
33
47
187
166
47
187
45
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
A
A
mJ
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