BUK7628-100A,118 NXP Semiconductors, BUK7628-100A,118 Datasheet - Page 4

MOSFET N-CH 100V 47A SOT404

BUK7628-100A,118

Manufacturer Part Number
BUK7628-100A,118
Description
MOSFET N-CH 100V 47A SOT404
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheets

Specifications of BUK7628-100A,118

Package / Case
D²Pak, TO-263 (2 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
47A
Vgs(th) (max) @ Id
4V @ 1mA
Input Capacitance (ciss) @ Vds
3100pF @ 25V
Power - Max
166W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
47 A
Power Dissipation
166000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934055882118
BUK7628-100A /T3
BUK7628-100A /T3

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BUK7628-100A,118
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
BUK7628-100A
Product data sheet
Fig 3.
Fig 5.
I
(A)
DM
10
10
10
1
3
2
currents as a function of drain-source voltage
T
Safe operating area; continuous and peak drain
unclamped inductive load
Single-shot avalanche rating; avalanche current as a function of avalanche period
1
mb
R
DS(on)
= 25 °C; I
= V
D.C.
DS
10
DM
/ I
D
is single pulse
10
I
(A)
AV
10
2
t
10 μs
100 μs
1 ms
10 ms
100 ms
p
10
1
2
10
= 1 μs
V
−3
All information provided in this document is subject to legal disclaimers.
DS
003aaf153
T
(V)
j
prior to avalanche = 150 °C
10
10
Rev. 2 — 26 April 2011
3
−2
10
−1
Fig 4.
WDSS
(%)
120
80
40
0
1
20
avalanche energy rating; avalanche energy as a
function of mounting base temperature
I
Normalised drain-source non-repetitive
D
t
25 °C
AV
N-channel TrenchMOS standard level FET
= 75 A; unclamped inductive load
003aaf169
(ms)
10
60
BUK7628-100A
100
140
© NXP B.V. 2011. All rights reserved.
T
(mb)
003aaf168
(°C)
180
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