BUK7618-55,118 NXP Semiconductors, BUK7618-55,118 Datasheet - Page 2

• Manufacturer Part Number: BUK7618-55,118
• Description: MOSFET N-CH 55V 57A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7618-55,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 57 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934045250118; BUK7618-55 /T3; BUK7618-55 /T3

Philips Semiconductors
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
April 1998
TrenchMOS
Standard level FET
j
SYMBOL PARAMETER
V
V
I
I
R
mb
SYMBOL PARAMETER
g
C
C
C
t
t
t
t
L
L
j
SYMBOL PARAMETER
I
I
V
t
Q
= 25˚C unless otherwise specified
DSS
GSS
d on
r
d off
f
DR
DRM
rr
= 25˚C unless otherwise specified
V
fs
d
s
(BR)DSS
GS(TO)
SD
DS(ON)
iss
oss
rss
rr
= 25˚C unless otherwise specified
(BR)GSS
Drain-source breakdown
voltage
Gate threshold voltage
Zero gate voltage drain current
Gate source leakage current
Gate-source breakdown
voltage
Drain-source on-state
resistance
Forward transconductance
Input capacitance
Output capacitance
Feedback capacitance
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal source inductance
Continuous reverse drain
current
Pulsed reverse drain current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
transistor
CONDITIONS
V
V
V
V
I
V
CONDITIONS
V
V
V
V
Resistive load
Measured from upper edge of drain
tab to centre of die
Measured from source lead
soldering point to source bond pad
CONDITIONS
I
I
I
V
G
F
F
F
GS
DS
DS
GS
GS
DS
GS
DD
GS
GS
= 25 A; V
= 50 A; V
= 50 A; -dI
= 1 mA;
= 0 V; I
= V
= 55 V; V
= 10 V; V
= 10 V; I
= 25 V; I
= 0 V; V
= 30 V; I
= 10 V; R
= -10 V; V
GS
; I
2
D
D
GS
GS
DS
D
D
D
F
= 0.25 mA;
= 1 mA
GS
/dt = 100 A/ s;
G
= 25 A
= 25 A
= 25 A;
= 0 V
= 0 V
R
DS
= 25 V; f = 1 MHz
= 10
= 30 V
= 0 V;
= 0 V
T
T
T
T
T
T
j
j
j
j
j
j
= 175˚C
= 175˚C
= 175˚C
= 175˚C
= -55˚C
= -55˚C
MIN.
MIN.
MIN.
2.0
1.0
55
50
16
6
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
TYP.
1500
TYP.
0.05
0.02
0.95
370
170
3.0
2.5
7.5
1.0
0.1
15
30
15
30
35
25
48
-
-
-
-
-
-
-
-
-
-
Product specification
BUK7618-55
MAX.
MAX.
MAX.
2000
500
470
250
200
4.0
4.4
1.2
10
20
18
38
22
60
50
38
57
1
-
-
-
-
-
-
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
m
m
nH
nH
pF
pF
pF
ns
ns
ns
ns
ns
V
V
V
V
V
V
S
A
A
V
V
C
A
A
A
A