BUK7618-55,118 NXP Semiconductors, BUK7618-55,118 Datasheet - Page 3

• Manufacturer Part Number: BUK7618-55,118
• Description: MOSFET N-CH 55V 57A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7618-55,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 18 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 57A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Input Capacitance (ciss) @ Vds: 2000pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.018 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: 16 V
• Continuous Drain Current: 57 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934045250118; BUK7618-55 /T3; BUK7618-55 /T3

Philips Semiconductors
AVALANCHE LIMITING VALUE
April 1998
TrenchMOS
Standard level FET
SYMBOL PARAMETER
W
DSS
ID% = 100 I
120
110
100
Fig.2. Normalised continuous drain current.
120
110
100
90
80
70
60
50
40
30
20
10
90
80
70
60
50
40
30
20
10
0
0
Fig.1. Normalised power dissipation.
0
0
PD%
ID%
Drain-source non-repetitive
unclamped inductive turn-off
energy
20
PD% = 100 P
20
D
/I
40
40
D 25 ˚C
transistor
60
60
= f(T
80
80
Tmb / C
Tmb / C
D
mb
/P
); conditions: V
D 25 ˚C
Normalised Current Derating
100
100
Normalised Power Derating
120
120
= f(T
140
140
mb
)
160
160
GS
CONDITIONS
I
V
D
180
180
GS
5 V
= 50 A; V
= 10 V; R
3
DD
GS
25 V;
= 50 ; T
I
0.001
D
0.01
0.1
& I
10
RDS(ON) = VDS/ID
Fig.3. Safe operating area. T
1000
1
1E-07
100
Fig.4. Transient thermal impedance.
10
DM
1
Zth j-mb / (K/W)
D =
1
0.05
0.02
mb
Z
0.5
0.2
0.1
= f(V
0
th j-mb
= 25 ˚C
DS
1E-05
= f(t); parameter D = t
); I
DC
DM
MIN.
single pulse; parameter t
10
-
1E-03
VDS / V
t / s
P
D
TYP.
-
Product specification
t
p
T
1E-01
BUK7618-55
mb
D =
100
MAX.
= 25 ˚C
p
BUKx55-lv
/T
125
t
T
p
t
tp =
1 us
10 us
100 us
1 ms
10 ms
100 ms
SOAX518
Rev 1.000
1E+01
UNIT
mJ
p