BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet - Page 11

• Manufacturer Part Number: BUK9608-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 6021pF @ 25V
• Power - Max: 253W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 125 A
• Power Dissipation: 253000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055645118; BUK9608-55A /T3; BUK9608-55A /T3

NXP Semiconductors
8. Revision history
Table 7.
BUK9608-55A
Product data sheet
Document ID
BUK9608-55A v.4
Modifications:
BUK95_9608_55A v.3
Revision history
Release date
20110131
20020506
•
•
•
The format of this data sheet has been redesigned to comply with the new identity guidelines
of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Type number BUK9608-55A separated from data sheet BUK95_9608_55A v.3.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data
Rev. 04 — 31 January 2011
Change notice
-
-
N-channel TrenchMOS logic level FET
BUK9608-55A
Supersedes
BUK95_9608_55A v.3
BUK9508_9608-55A v.2
© NXP B.V. 2011. All rights reserved.
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