BUK9608-55A,118 NXP Semiconductors, BUK9608-55A,118 Datasheet - Page 9

• Manufacturer Part Number: BUK9608-55A,118
• Description: MOSFET N-CH 55V 75A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK9608-55A,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.5 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 92nC @ 5V
• Input Capacitance (ciss) @ Vds: 6021pF @ 25V
• Power - Max: 253W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0075 Ohm @ 10 V
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 125 A
• Power Dissipation: 253000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055645118; BUK9608-55A /T3; BUK9608-55A /T3

NXP Semiconductors
BUK9608-55A
Product data sheet
Fig 13. Gate-source voltage as a function of turn-on
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
V
(V)
GS
5
4
3
2
1
0
gate charge; typical values
0
20
V
DD
= 14 V
40
60
(A)
I
S
100
V
80
60
40
20
DD
0
0.0
80
= 44 V
All information provided in this document is subject to legal disclaimers.
Q
G
03ni43
(nC)
Rev. 04 — 31 January 2011
100
0.3
T
j
= 175 °C
0.6
Fig 14. Input, output and reverse transfer capacitances
(pF)
12000
10000
C
8000
6000
4000
2000
0.9
0
T
10
as a function of drain-source voltage; typical
values
j
= 25 °C
−2
V
SD
03ni42
(V)
C
N-channel TrenchMOS logic level FET
C
rss
oss
1.2
10
−1
C
iss
BUK9608-55A
1
10
© NXP B.V. 2011. All rights reserved.
V
DS
03ni49
(V)
10
2
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