PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet - Page 2

• Manufacturer Part Number: PSMN025-100D,118
• Description: MOSFET N-CH 100V 47A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN025-100D,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055803118; PSMN025-100D /T3; PSMN025-100D /T3

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN025-100D_3
Product data sheet
Pin
1
2
3
mb
Type number
PSMN025-100D
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
Symbol
G
D
S
D
Pinning information
Ordering information
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
Package
Name
SC-63;
DPAK
Description
gate
drain
source
mounting base; connected to
drain
[1]
It is not possible to make connection to pin 2.
Description
plastic single-ended surface-mounted package (DPAK); 3 leads (one
lead cropped)
Conditions
T
T
V
V
pulsed; T
T
T
pulsed; T
j
j
mb
mb
GS
GS
≥ 25 °C; T
≤ 175 °C; T
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
mb
mb
Rev. 03 — 20 November 2008
= 25 °C; see
= 25 °C
j
≤ 175 °C
j
mb
mb
≥ 25 °C; R
= 100 °C; see
= 25 °C; see
Figure 3
[1]
N-channel TrenchMOS SiliconMAX standard level FET
Simplified outline
GS
Figure 2
= 20 kΩ
Figure
(SC-63; DPAK)
Figure 1
SOT428
1
1; see
mb
2
3
Figure 2
PSMN025-100D
Graphic symbol
Min
-
-
-20
-
-
-
-
-55
-55
-
-
G
mbb076
© NXP B.V. 2008. All rights reserved.
Max
100
100
20
33
47
188
150
175
175
47
188
D
Version
SOT428
S
Unit
V
V
V
A
A
A
W
°C
°C
A
A
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