PSMN025-100D,118 NXP Semiconductors, PSMN025-100D,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN025-100D,118
• Description: MOSFET N-CH 100V 47A SOT428
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN025-100D,118

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 25 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 47A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 61nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 150W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.025 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 47 A
• Power Dissipation: 150000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055803118; PSMN025-100D /T3; PSMN025-100D /T3

NXP Semiconductors
PSMN025-100D_3
Product data sheet
Fig 12. Gate-source voltage as a function of gate
Fig 14. Transfer characteristics: drain current as a
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45
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25
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Drain current, ID (A)
Gate-source voltage, VGS (V)
VDS > ID X RDS(ON)
Tj = 25 C
ID = 45 A
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charge; typical values
function of gate-source voltage; typical values
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
1
Gate-source voltage, VGS (V)
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Gate charge, QG (nC)
VDD = 20 V
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175 C
4
VDD = 80 V
Rev. 03 — 20 November 2008
Tj = 25 C
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lma027
lma021
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N-channel TrenchMOS SiliconMAX standard level FET
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Source current as a function of source-drain
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0
100
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Source-Drain Diode Current, IF (A)
VGS = 0 V
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
Capacitances, Ciss, Coss, Crss (pF)
as a function of drain-source voltage; typical
values
voltage; typical values
Source-Drain Voltage, VSDS (V)
Drain-Source Voltage, VDS (V)
1
175 C
PSMN025-100D
Tj = 25 C
10
© NXP B.V. 2008. All rights reserved.
1.1 1.2 1.3 1.4 1.5
Coss
Crss
Ciss
lma026
lma028
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