PSMN015-100P,127 NXP Semiconductors, PSMN015-100P,127 Datasheet - Page 3
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PSMN015-100P,127
Manufacturer Part Number
PSMN015-100P,127
Description
MOSFET N-CH 100V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN015-100P127.pdf
(13 pages)
Specifications of PSMN015-100P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055640127::PSMN015-100P::PSMN015-100P
Philips Semiconductors
9397 750 12543
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P der
P
(%)
120
(A)
mb
10 3
10 2
I D
der
80
40
10
0
1
function of mounting base temperature.
= 25 C; I
0
1
=
---------------------- -
P
tot 25 C
P
tot
DM
50
is single pulse; V
Limit R DSon = V DS /I D
100%
100
GS
= 10 V.
150
T mb ( C)
10
03aa16
DC
200
Rev. 05 — 14 January 2004
Fig 2. Normalized continuous drain current as a
I der
(%)
I
120
der
80
40
0
function of mounting base temperature.
N-channel TrenchMOS™ Standard level FET
0
=
PSMN015-100P/100B
-------------------
I
D 25 C
10 2
I
D
t p = 10 s
100 s
1 ms
10 ms
50
100%
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
V DS (V)
150
T mb ( C)
03am53
03an67
10 3
200
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