PSMN015-100P,127 NXP Semiconductors, PSMN015-100P,127 Datasheet - Page 8
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PSMN015-100P,127
Manufacturer Part Number
PSMN015-100P,127
Description
MOSFET N-CH 100V 75A TO220AB
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN015-100P127.pdf
(13 pages)
Specifications of PSMN015-100P,127
Package / Case
TO-220AB-3
Mounting Type
Through Hole
Power - Max
300W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
90nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
100V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
15 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.015 Ohm @ 10 V
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
300000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055640127::PSMN015-100P::PSMN015-100P
Philips Semiconductors
9397 750 12543
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
I S
j
100
= 25 C and 175 C; V
75
50
25
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.3
175 C
GS
0.6
= 0 V
T j = 25 C
0.9
V SD (V)
03am57
1.2
Rev. 05 — 14 January 2004
Fig 13. Gate-source voltage as a function of gate
V GS
I
(V)
D
10
= 75 A; V
8
6
4
2
0
charge; typical values.
N-channel TrenchMOS™ Standard level FET
0
I D = 75 A
T j = 25 C
PSMN015-100P/100B
DD
= 20 V and 80 V
25
V DD = 20 V
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
50
75
80 V
Q G (nC)
03am59
100
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