PSMN1R7-30YL,115 NXP Semiconductors, PSMN1R7-30YL,115 Datasheet - Page 11

• Manufacturer Part Number: PSMN1R7-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN1R7-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 77.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 5057pF @ 12V
• Power - Max: 109W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Dual Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 109 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4678-2; 934063068115; PSMN1R7-30YL T/R

NXP Semiconductors
PSMN1R7-30YL
Product data sheet
Fig 20. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
100
(A)
I
80
60
40
20
S
0
0.0
All information provided in this document is subject to legal disclaimers.
0.2
Rev. 04 — 20 April 2010
0.4
T
j
= 150 °C
N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK
0.6
0.8
003aac447
25 °C
V
SD
(V)
1.0
PSMN1R7-30YL
© NXP B.V. 2010. All rights reserved.
11 of 16