PSMN1R7-60BS NXP Semiconductors, PSMN1R7-60BS Datasheet
PSMN1R7-60BS
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PSMN1R7-60BS Summary of contents
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... PSMN1R7-60BS N-channel mΩ standard level MOSFET in D2PAK Rev. 2 — 29 February 2012 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... T pulsed ° ° 120 j(init Ω; Unclamped R GS All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS Graphic symbol mbb076 Version SOT404 Min Max - -20 20 [1] - 120 ...
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... N-channel mΩ standard level MOSFET in D2PAK 003aaf754 150 200 ( ° Fig All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS 120 P der (%) 100 Normalized total power dissipation as a function of mounting base temperature ...
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... PSMN1R7-60BS Product data sheet N-channel mΩ standard level MOSFET in D2PAK Conditions see Figure 4 Minimum footprint; mounted on a printed-circuit board - All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS Min Typ Max - 0.22 0. 003aaf752 tp δ ...
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... Figure 14; DS see Figure MHz see Figure 16 = 0.4 Ω 4.7 Ω G(ext) D All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS Min Typ 0. 1. ...
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... D (A) 90 120 I (A) D Fig 6. 003aaf746 I D (A) C iss C rss (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS Min Typ - 0 175 ° Transfer characteristics: drain current as a function of gate-source voltage ...
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... GS Fig 10. Gate-source threshold voltage as a function of 03aa35 R (mΩ) typ max (V) GS Fig 12. Drain-source on-state resistance as a function All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS 5 GS(th) (V) 4 max 3 typ 2 min 1 0 − junction temperature ...
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... Q (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS GS(pl) V GS(th GS1 GS2 ...
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... N-channel mΩ standard level MOSFET in D2PAK 200 I S (A) 160 120 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS 003aaf750 = 25 ° 0.9 1.2 V (V) SD © NXP B.V. 2012. All rights reserved ...
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... max. 1.60 10.30 2.90 11 2.54 1.20 9.70 2.10 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS mounting base 15.80 2.60 14.80 2.20 EUROPEAN PROJECTION SOT404 ISSUE DATE 05-02-11 06-03-16 © NXP B.V. 2012. All rights reserved ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN1R7-60BS v.2 20120229 • Modifications: Status changed from objective to product. • Various changes to content. PSMN1R7-60BS v.1 20110823 PSMN1R7-60BS Product data sheet N-channel mΩ standard level MOSFET in D2PAK Data sheet status Change notice ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS © NXP B.V. 2012. All rights reserved ...
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... Plus,MIFARE Ultralight,MoReUse,QLPAK,Silicon Tuner,SiliconMAX,SmartXA,STARplug,TOPFET,TrenchMOS,TriMediaand UCODE— are trademarks of NXP B.V. HD RadioandHD Radiologo — are trademarks of iBiquity Digital Corporation. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 2 — 29 February 2012 PSMN1R7-60BS © NXP B.V. 2012. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2012. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 29 February 2012 Document identifier: PSMN1R7-60BS ...