PSMN030-150B,118 NXP Semiconductors, PSMN030-150B,118 Datasheet - Page 6

• Manufacturer Part Number: PSMN030-150B,118
• Description: MOSFET N-CH 150V 55.5A SOT404
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN030-150B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 98nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 55.5A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 55.5 A
• Power Dissipation: 250000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934056598118::PSMN030-150B /T3::PSMN030-150B /T3

NXP Semiconductors
PSMN030-150B
Product data sheet
Fig 6.
Fig 8.
Fig 10. Normalized drain-source on-state resistance
(A)
(A)
I
I
a
D
D
2.9
2.1
1.3
0.5
80
60
40
20
50
40
30
20
10
0
0
−60
function of drain-source voltage; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Output characteristics: drain current as a
V
Transfer characteristics: drain current as a
0
0
j
DS
= 25 °C
> I
D
0.4
x R
2
DSon
20
V
T
GS
j
0.8
= 175 °C
(V) = 10
4
8
1.2
100
T
j
= 25 °C
6
1.6
T
All information provided in this document is subject to legal disclaimers.
V
j
(°C)
5.4
5.2
003aaf142
4.8
003aaf144
003aaf146
V
GS
6
5
4.4
DS
4.6
(V)
(V)
Rev. 02 — 13 December 2010
180
2
8
N-channel TrenchMOS SiliconMAX standard level FET
Fig 7.
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
R
V
DS(on)
GS(th)
(Ω)
(S)
(V)
g
0.07
0.05
0.03
0.01
fs
60
40
20
0
5
4
3
2
1
0
−60
of drain current; typical values
drain current; typical values
junction temperature
T
Drain-source on-state resistance as a function
V
Forward transconductance as a function of
I
0
0
D
j
DS
= 25 °C
= 1 mA; V
4.4
> I
D
4.6
10
10
x R
DSon
DS
4.8
20
= V
PSMN030-150B
20
20
maximum
GS
minimum
5
typical
T
T
j
j
= 25 °C
= 175 °C
30
30
100
5.2
V
GS
© NXP B.V. 2010. All rights reserved.
T
40
40
j
(V) = 10
(°C)
003aaf143
003aaf145
003aaf148
I
I
5.4
D
D
(A)
(A)
6
8
180
50
50
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