PSMN035-150P,127 NXP Semiconductors, PSMN035-150P,127 Datasheet - Page 10

• Manufacturer Part Number: PSMN035-150P,127
• Description: MOSFET N-CH 150V 50A SOT78
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN035-150P,127

• Package / Case: TO-220AB-3
• Mounting Type: Through Hole
• Power - Max: 250W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 79nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 50A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 35 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 30 mOhms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 250 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055716127::PSMN035-150P::PSMN035-150P

Fig 17. SOT404 (D
Philips Semiconductors
9397 750 07994
Product specification
Plastic single-ended surface mounted package (Philips version of D
(one lead cropped)
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT404
4.50
4.10
A
H D
1.40
1.27
A 1
2
D
-PAK).
D 1
0.85
0.60
b
IEC
0.64
0.46
c
max.
1
D
11
e
JEDEC
E
1.60
1.20
D 1
2
e
REFERENCES
PSMN035-150B; PSMN035-150P
Rev. 04 — 22 February 2001
10.30
9.70
E
3
0
b
2.54
e
scale
EIAJ
2.5
N-channel enhancement mode field-effect transistor
2.90
2.10
L p
5 mm
15.80
14.80
H D
mounting
2.60
2.20
2
Q
base
-PAK); 3 leads
L p
A 1
Q
PROJECTION
c
EUROPEAN
A
© Philips Electronics N.V. 2001. All rights reserved.
ISSUE DATE
99-06-25
01-02-12
SOT404
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