PSMN035-150P NXP Semiconductors, PSMN035-150P Datasheet

MOSFET Power RAIL PWR-MOS

PSMN035-150P

Manufacturer Part Number
PSMN035-150P
Description
MOSFET Power RAIL PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PSMN035-150P

Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.035 Ohms
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
TO-220AB
Minimum Operating Temperature
- 55 C
Lead Free Status / Rohs Status
 Details
Other names
PSMN035-150P,127

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PSMN035-150P
Manufacturer:
NXP
Quantity:
42 000
Part Number:
PSMN035-150P
Manufacturer:
NXP
Quantity:
12 500
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
Table 1.
Symbol Parameter
V
P
Dynamic characteristics
Q
Static characteristics
R
DS
tot
GD
DSon
Low conduction losses due to low
on-state resistance
Switched-mode power supplies
PSMN035-150P
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 16 November 2009
drain-source voltage T
total power
dissipation
gate-drain charge
drain-source
on-state resistance
Quick reference
Conditions
T
T
V
T
V
T
j
mb
mb
j
j
GS
GS
≥ 25 °C; T
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C; see
= 10 V; V
= 10 V; I
j
D
≤ 175 °C
DS
= 25 A;
Figure 13
Figure 11
= 120 V;
Figure 1
Figure 3
Suitable for high frequency
applications due to fast switching
characteristics
and
and
12
2
Min
-
-
-
-
-
-
Product data sheet
Typ
-
-
-
-
33
30
Max
150
50
-
-
45
35
Unit
V
W
nC
mΩ

Related parts for PSMN035-150P

PSMN035-150P Summary of contents

Page 1

... PSMN035-150P N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 16 November 2009 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...

Page 2

... TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB PSMN035-150P_4 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Simplified outline SOT78 (TO-220AB) Rev. 04 — 16 November 2009 PSMN035-150P Graphic symbol mbb076 Version SOT78 © NXP B.V. 2009. All rights reserved ...

Page 3

... GS j(init Ω; unclamped; see R Figure 4 GS 03aa24 ( 150 200 1 T (°C) mb Fig 2. Safe operating area; continuous and peak drain currents as a function of drain-source volt Rev. 04 — 16 November 2009 PSMN035-150P Min Max - 150 - 150 - Figure 2 - 200 - 250 -55 175 -55 175 - 50 - 200 ≤ ...

Page 4

... N-channel TrenchMOS SiliconMAX standard level FET 03aa16 ( −3 150 200 10 T (°C) mb Fig 4. Non-repetitive avalanche ruggedness current as a function of pulse duration Rev. 04 — 16 November 2009 PSMN035-150P 003aaa017 25 °C prior to avalanche = 150 ° −2 − (ms) p © NXP B.V. 2009. All rights reserved ...

Page 5

... Fig 5. Transient thermal impedance from junction to solder point as a function of pulse duration PSMN035-150P_4 Product data sheet N-channel TrenchMOS SiliconMAX standard level FET Conditions see Figure 5 Single Pulse −5 −4 − Rev. 04 — 16 November 2009 PSMN035-150P Min Typ Max - 0 003aaa018 t p δ ...

Page 6

... Figure MHz °C; see Figure MHz °C; see Figure 1.5 Ω 5.6 Ω °C G(ext ° see Figure /dt = -100 A/µ ° Rev. 04 — 16 November 2009 PSMN035-150P Min Typ Max Unit 150 - - 0.05 10 µ 500 µ 100 100 mΩ mΩ 4720 ...

Page 7

... DS Fig 7. Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aaa024 ( max (V) GS Fig 9. Forward transconductance as a function of drain current; typical values Rev. 04 — 16 November 2009 PSMN035-150P 003aaa020 × R > DSon 175 ° ° (V) GS 003aaa025 = 25 ° 175 ° ...

Page 8

... T (°C) j Fig 11. Drain-source on-state resistance as a function of drain current; typical values 003aaa022 ( 120 160 0 T (°C) j Fig 13. Gate-source voltage as a function of gate charge; typical values Rev. 04 — 16 November 2009 PSMN035-150P 003aaa021 4.6 V 4.8 V 5.0 V 5.2 V 5 (A) D 003aaa028 = ° 120 V ...

Page 9

... N-channel TrenchMOS SiliconMAX standard level FET 003aaa026 50 45 Ciss Coss Crss (V) DS Fig 15. Source current as a function of source-drain voltage; typical values Rev. 04 — 16 November 2009 PSMN035-150P 003aaa027 = 175 ° ° 0.2 0.4 0.6 0.8 1.0 1.2 V (V) SD © NXP B.V. 2009. All rights reserved ...

Page 10

... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 04 — 16 November 2009 PSMN035-150P mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION ...

Page 11

... Product data sheet - The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. Legal texts have been adapted to the new company name where appropriate. Type number PSMN035-150P separated from data sheet PSMN035-150_SERIES_HG_3. Product specification - Product specification ...

Page 12

... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 04 — 16 November 2009 PSMN035-150P © NXP B.V. 2009. All rights reserved ...

Page 13

... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 November 2009 Document identifier: PSMN035-150P_4 ...

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