PSMN004-60B,118 NXP Semiconductors, PSMN004-60B,118 Datasheet - Page 3

• Manufacturer Part Number: PSMN004-60B,118
• Description: MOSFET N-CH 60V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-60B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 230W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 168nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 60V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0036 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057041118::PSMN004-60B /T3::PSMN004-60B /T3

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN004-60B_2
Product data sheet
Symbol
V
V
V
I
I
P
T
T
V
Source-drain diode
I
I
Avalanche ruggedness
E
I
D
DM
S
SM
DS(AL)S
Fig 1.
stg
j
DS
DGR
GS
tot
GSM
DS(AL)S
(%)
I
der
120
100
80
60
40
20
0
function of mounting base temperature
Normalized continuous drain current as a
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak gate-source voltage
source current
peak source current
non-repetitive drain-source
avalanche energy
non-repetitive drain-source
avalanche current
30
60
90
120
150
T
mb
Conditions
T
T
V
V
t
T
pulsed; t
T
t
V
V
V
T
p
p
03ah79
j
j
mb
mb
j(init)
GS
GS
GS
sup
GS
(°C)
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
Rev. 02 — 15 December 2009
180
= 25 °C; see
= 25 °C
= 10 V; T
= 10 V; T
= 10 V; T
= 10 V; V
= 15 V; unclamped; t
= 25 °C; unclamped
p
≤ 50 µs; δ = 25 %; T
j
j
≤ 175 °C
≤ 175 °C; R
mb
mb
j(init)
sup
N-channel TrenchMOS SiliconMAX standard level FET
= 100 °C; see
= 25 °C; see
= 15 V; R
Figure 2
= 25 °C; I
Fig 2.
mb
mb
P
(%)
= 25 °C; see
= 25 °C
der
120
80
40
GS
p
0
GS
function of mounting base temperature
Normalized total power dissipation as a
= 0.1 ms; R
0
D
= 20 kΩ
= 75 A;
= 50 Ω;
Figure 1
j
Figure 1
≤ 150 °C
Figure 3
50
and
GS
= 50 Ω
3
PSMN004-60B
100
Min
-
-
-20
-
-
-
-
-55
-55
-30
-
-
-
-
150
© NXP B.V. 2009. All rights reserved.
T
mb
Max
60
60
20
75
75
400
230
175
175
30
75
400
500
75
03aa16
(°C)
200
Unit
V
V
V
A
A
A
W
°C
°C
V
A
A
mJ
A
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