PSMN004-36B,118 NXP Semiconductors, PSMN004-36B,118 Datasheet
PSMN004-36B,118
Specifications of PSMN004-36B,118
PSMN004-36B /T3
PSMN004-36B /T3
Related parts for PSMN004-36B,118
PSMN004-36B,118 Summary of contents
Page 1
... N-channel enhancement mode field-effect transistor Rev. 01 — 19 November 2001 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ Product availability: PSMN004-36P in SOT78 (TO-220AB) PSMN004-36B in SOT404 (D 2. Features Very low on-state resistance Fast switching. 3. Applications converters Switch mode power supplies. ...
Page 2
... T storage temperature stg T operating junction temperature j Source-drain diode I source (diode forward) current (DC peak source (diode forward) current T SM Avalanche ruggedness E non-repetitive avalanche energy AS I non-repetitive avalanche current AS 9397 750 08621 Product data PSMN004-36P/36B N-channel enhancement mode field-effect transistor Conditions 175 ...
Page 3
... N-channel enhancement mode field-effect transistor 03aa16 120 I D (%) 150 200 der Fig 2. Normalized continuous drain current as a function of mounting base temperature Rev. 01 — 19 November 2001 PSMN004-36P/36B 03ag42 50 100 150 200 Tmb (º ------------------- 100 03ag44 100 100 (V) © Koninklijke Philips Electronics N.V. 2001. All rights reserved. ...
Page 4
... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 08621 Product data PSMN004-36P/36B N-channel enhancement mode field-effect transistor Conditions Figure 4 vertical in still air; SOT78 package mounted on a printed circuit board; minimum footprint; SOT404 package ...
Page 5
... Source-drain diode V source-drain (diode forward) voltage source-drain (diode forward) voltage reverse recovery time rr Q recovered charge r 9397 750 08621 Product data PSMN004-36P/36B N-channel enhancement mode field-effect transistor Conditions I = 0. Figure ...
Page 6
... Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values. 03ag46 2.6V a 1.6 2.8 V 1 ---------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 19 November 2001 PSMN004-36P/36B 03ag47 V DS > DS(ON ºC 175 ºC 0.6 1 DSON 03aa27 - 120 180 ...
Page 7
... N-channel enhancement mode field-effect transistor 03aa33 ( 120 180 Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF iss C oss C rss (V) Rev. 01 — 19 November 2001 PSMN004-36P/36B 03aa36 min typ max 0 0.5 1 1 03ag49 10 2 © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
Page 8
... Product data N-channel enhancement mode field-effect transistor 03ag48 ( º 1 ( Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 19 November 2001 PSMN004-36P/36B 03ag50 º 120 160 200 Q G (nC © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
Page 9
... 0.7 15.8 6.4 10.3 15.0 2.54 0.4 15.2 5.9 9.7 13.5 REFERENCES JEDEC EIAJ 3-lead TO-220AB SC-46 Rev. 01 — 19 November 2001 PSMN004-36P/36B base ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.6 2.7 2.2 EUROPEAN ISSUE DATE PROJECTION 00-09-07 01-02-16 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. ...
Page 10
... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC EIAJ Rev. 01 — 19 November 2001 PSMN004-36P/36B 2 -PAK); 3 leads mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 99-06-25 01-02-12 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT404 ...
Page 11
... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20011119 Product Data; Initial Version 9397 750 08621 Product data PSMN004-36P/36B N-channel enhancement mode field-effect transistor Rev. 01 — 19 November 2001 © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
Page 12
... Rev. 01 — 19 November 2001 PSMN004-36P/36B Fax: + 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
Page 13
... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 19 November 2001 Document order number: 9397 750 08621 PSMN004-36P/36B N-channel enhancement mode field-effect transistor ...