PSMN005-75B,118 NXP Semiconductors, PSMN005-75B,118 Datasheet - Page 7

• Manufacturer Part Number: PSMN005-75B,118
• Description: MOSFET N-CH 75V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN005-75B,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Power - Max: 230W
• Fet Type: MOSFET N-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 165nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 75A
• Drain To Source Voltage (vdss): 75V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 25A, 10V
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.005 Ohm @ 10 V
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 75 A
• Power Dissipation: 230000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057043118::PSMN005-75B /T3::PSMN005-75B /T3

NXP Semiconductors
PSMN005-75B_1
Product data sheet
Fig 5.
Fig 7.
(A)
I
10
10
10
10
10
10
(A)
D
I
100
D
−1
−2
−3
−4
−5
−6
75
50
25
0
gate-source voltage
function of gate-source voltage; typical values
Sub-threshold drain current as a function of
Transfer characteristics: drain current as a
0
0
2
2
min
T
j
= 175 °C
typ
4
4
max
V
V
GS
25 °C
GS
(V)
(V)
03ah94
03aa35
Rev. 01 — 16 November 2009
6
6
N-channel TrenchMOS SiliconMAX standard level FET
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
300
200
100
D
5
4
3
2
1
0
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
GS
(V) =
7.5
0.5
20
10
0
8
PSMN005-75B
60
1
max
min
typ
7
120
1.5
© NXP B.V. 2009. All rights reserved.
V
T
DS
j
03ah92
(°C)
03aa32
(V)
6.5
5.5
4.5
6
5
180
2
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