PSMN005-75B,118 NXP Semiconductors, PSMN005-75B,118 Datasheet - Page 7
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PSMN005-75B,118
Manufacturer Part Number
PSMN005-75B,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN005-75B118.pdf
(13 pages)
Specifications of PSMN005-75B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
230W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
165nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
230000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057043118::PSMN005-75B /T3::PSMN005-75B /T3
NXP Semiconductors
PSMN005-75B_1
Product data sheet
Fig 5.
Fig 7.
(A)
I
10
10
10
10
10
10
(A)
D
I
100
D
−1
−2
−3
−4
−5
−6
75
50
25
0
gate-source voltage
function of gate-source voltage; typical values
Sub-threshold drain current as a function of
Transfer characteristics: drain current as a
0
0
2
2
min
T
j
= 175 °C
typ
4
4
max
V
V
GS
25 °C
GS
(V)
(V)
03ah94
03aa35
Rev. 01 — 16 November 2009
6
6
N-channel TrenchMOS SiliconMAX standard level FET
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
300
200
100
D
5
4
3
2
1
0
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
GS
(V) =
7.5
0.5
20
10
0
8
PSMN005-75B
60
1
max
min
typ
7
120
1.5
© NXP B.V. 2009. All rights reserved.
V
T
DS
j
03ah92
(°C)
03aa32
(V)
6.5
5.5
4.5
6
5
180
2
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