PSMN005-75B,118 NXP Semiconductors, PSMN005-75B,118 Datasheet - Page 8
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PSMN005-75B,118
Manufacturer Part Number
PSMN005-75B,118
Description
MOSFET N-CH 75V 75A D2PAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PSMN005-75B118.pdf
(13 pages)
Specifications of PSMN005-75B,118
Package / Case
D²Pak, TO-263 (2 leads + tab)
Mounting Type
Surface Mount
Power - Max
230W
Fet Type
MOSFET N-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
165nC @ 10V
Vgs(th) (max) @ Id
4V @ 1mA
Current - Continuous Drain (id) @ 25° C
75A
Drain To Source Voltage (vdss)
75V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5 mOhm @ 25A, 10V
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.005 Ohm @ 10 V
Drain-source Breakdown Voltage
75 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
75 A
Power Dissipation
230000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934057043118::PSMN005-75B /T3::PSMN005-75B /T3
NXP Semiconductors
PSMN005-75B_1
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(Ω)
0.015
0.005
V
DSon
(V)
0.01
GS
10
8
6
4
2
0
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
V
T
V
D
j
DD
GS
= 75 A
= 25 °C
= 60 V
(V) =
5
50
100
5.5
100
200
6
150
7 8
T
I
D
j
Q
= 25 °C
(A)
G
10
03ah93
03ah98
(nC)
6.5
20
Rev. 01 — 16 November 2009
300
200
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
a
10
10
10
10
C
2.5
1.5
0.5
2
1
0
5
4
3
2
10
−60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-1
0
1
PSMN005-75B
60
10
120
© NXP B.V. 2009. All rights reserved.
V
T
DS
j
03ah97
(°C)
(V)
03aj03
C
C
C
oss
iss
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10
180
2
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