BUK7107-40ATC,118 NXP Semiconductors, BUK7107-40ATC,118 Datasheet - Page 9

• Manufacturer Part Number: BUK7107-40ATC,118
• Description: MOSFET N-CH 40V 75A D2PAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of BUK7107-40ATC,118

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 7 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 75A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Input Capacitance (ciss) @ Vds: 4500pF @ 25V
• Power - Max: 272W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (4 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.007 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 140 A
• Power Dissipation: 272 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934057269118; BUK7107-40ATC /T3; BUK7107-40ATC /T3

NXP Semiconductors
BUK7107-40ATC_2
Product data sheet
Fig 9.
Fig 11. Forward transconductance as a function of
V
GS(th)
(V)
g fs
(S)
80
60
40
20
0
5
4
3
2
1
0
−60
junction temperature
drain current; typical values
Gate-source threshold voltage as a function of
0
20
0
40
60
max
min
typ
60
120
80
T
I D (A)
j
(°C)
03ni68
03aa32
Rev. 02 — 6 February 2009
100
180
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
(A)
I
10
10
10
10
10
10
D
8000
6000
4000
2000
(pF)
−1
−2
−3
−4
−5
−6
C
gate-source voltage
as a function of drain-source voltage; typical
values
0
0
N-channel TrenchPLUS standard level FET
10 -2
10 -1
BUK7107-40ATC
2
C rss
min
1
typ
C iss
C oss
4
max
10
V
© NXP B.V. 2009. All rights reserved.
GS
V DS (V)
(V)
03aa35
03ni69
6
10 2
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