BUK7107-55ATE,118 NXP Semiconductors, BUK7107-55ATE,118 Datasheet
BUK7107-55ATE,118
Specifications of BUK7107-55ATE,118
BUK7107-55ATE /T3
BUK7107-55ATE /T3
Related parts for BUK7107-55ATE,118
BUK7107-55ATE,118 Summary of contents
Page 1
... BUK7107-55ATE N-channel TrenchPLUS standard level FET Rev. 02 — 19 February 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications ...
Page 2
... BUK7107-55ATE D2PAK plastic single-ended surface-mounted package (D2PAK); 5 leads (one lead cropped) BUK7107-55ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Simplified outline SOT426 (D2PAK) Rev. 02 — 19 February 2009 BUK7107-55ATE Graphic symbol mbl317 Version SOT426 © NXP B.V. 2009. All rights reserved ...
Page 3
... Figure 1 mb continuous = 5 ms; δ = 0.01 pulsed 250 µ °C mb ≤ 10 µs; pulsed ° ≤ Ω sup °C; unclamped j(init) HBM 100 pF 1.5 kΩ Rev. 02 — 19 February 2009 BUK7107-55ATE Min Max - [1] - 140 [ 560 - 272 - -100 100 -55 175 -55 ...
Page 4
... T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature DC 10 Rev. 02 — 19 February 2009 BUK7107-55ATE 03ni63 Capped at 75A due to package 50 100 150 200 T mb (°C) 03nf55 μs 100 μ 100 (V) © NXP B.V. 2009. All rights reserved. ...
Page 5
... Transient thermal impedance from junction to mounting base as a function of pulse duration BUK7107-55ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Conditions mounted on a PCB; minimum footprint see Figure 4 −4 −3 − Rev. 02 — 19 February 2009 BUK7107-55ATE Min Typ Max Unit - 0.55 K/W 03ni29 t p δ ...
Page 6
... Figure 250 µ ° 250 µA; T < 175 °C; T > -55 ° 125 µA < I < 250 µ ° see Figure MHz °C; see Figure 1.2 Ω Ω R G(ext) Rev. 02 — 19 February 2009 BUK7107-55ATE Min Typ Max Unit 4 0.1 10 µ 250 µ 1000 ...
Page 7
... N-channel TrenchPLUS standard level FET Conditions from upper edge of drain mounting base to center of die from source lead to source bond pad ° see Figure /dt = -100 A/µ - Rev. 02 — 19 February 2009 BUK7107-55ATE Min Typ Max Unit - 2 7 0.85 1 200 - nC © NXP B.V. 2009. All rights reserved. ...
Page 8
... I D (A) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature Rev. 02 — 19 February 2009 BUK7107-55ATE N-channel TrenchPLUS standard level FET 03ni66 (V) 03ne89 0 60 120 ( ° © NXP B.V. 2009. All rights reserved. 20 180 ...
Page 9
... Fig 10. Sub-threshold drain current as a function of gate-source voltage 8000 03ni68 C (pF) 6000 4000 2000 100 I D (A) Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 19 February 2009 BUK7107-55ATE 03aa35 min typ max (V) GS 03ni69 C iss C oss C rss ...
Page 10
... S F (mV/K) −1.60 −1.50 −1.40 150 200 645 T (°C) j Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values Rev. 02 — 19 February 2009 BUK7107-55ATE N-channel TrenchPLUS standard level FET 03nf25 (nC) 03ne85 max typ min 655 665 V (mV) F © NXP B.V. 2009. All rights reserved. ...
Page 11
... Fig 17. Reverse diode current as a function of reverse diode voltage; typical values BUK7107-55ATE_2 Product data sheet N-channel TrenchPLUS standard level FET 100 175 ° °C 0 0.0 0.2 0.4 0.6 0.8 Rev. 02 — 19 February 2009 BUK7107-55ATE 03ni72 1 (V) © NXP B.V. 2009. All rights reserved ...
Page 12
... E e max. 1.60 10.30 2.90 15.80 11 1.70 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA Rev. 02 — 19 February 2009 BUK7107-55ATE N-channel TrenchPLUS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-03-09 06-03-16 © NXP B.V. 2009. All rights reserved. ...
Page 13
... Legal texts have been adapted to the new company name where appropriate. BUK7107_55ATE-01 20020729 (9397 750 09875) BUK7107-55ATE_2 Product data sheet N-channel TrenchPLUS standard level FET Data sheet status Change notice Product data sheet - Product data sheet - Rev. 02 — 19 February 2009 BUK7107-55ATE Supersedes BUK7107_55ATE-01 - © NXP B.V. 2009. All rights reserved ...
Page 14
... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 19 February 2009 BUK7107-55ATE © NXP B.V. 2009. All rights reserved ...
Page 15
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: Rev. 02 — 19 February 2009 Document identifier: BUK7107-55ATE_2 All rights reserved. ...