IRF9333PBF International Rectifier, IRF9333PBF Datasheet - Page 2

• Manufacturer Part Number: IRF9333PBF
• Description: MOSFET P-CH 30V 9.2A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9333PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19.4 mOhm @ 9.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 15.6mohm
• Rds(on) Test Voltage Vgs: -10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 32.5 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 9.2 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
„
…
†
Static @ T
BV
ΔΒV
R
V
ΔV
I
I
gfs
Q
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
Thermal Resistance
R
R
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
DS(on)
GS(th)
G
iss
oss
rss
AS
SD
θJL
θJA
g
g
gs
gd
rr
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R
When mounted on 1 inch square copper board.
For DESIGN AID ONLY, not subject to production testing.
2
GS(th)
DSS
Starting T
θ
DSS
is measured at T
/ΔT
J
J
= 25°C, L = 3.5mH, R
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Junction-to-Drain Lead
Junction-to-Ambient
= 25°C (unless otherwise specified)
Parameter
J
of approximately 90°C.
Ù
™
Parameter
Parameter
G
Parameter
f
= 25Ω, I
g
AS
d
= -7.5A.
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
-1.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-30
13
0.019
1110
15.6
25.6
–––
-1.8
-5.7
–––
–––
–––
–––
–––
230
160
–––
–––
–––
3.5
6.4
14
25
15
16
44
55
49
24
15
-150
-100
Typ.
Typ.
19.4
32.5
-2.4
-1.0
-1.2
–––
–––
––– mV/°C
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-2.5
–––
–––
-75
38
36
23
V/°C
mΩ
nC
nC
nC
μA
nA
pF
ns
ns
V
V
S
Ω
A
V
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
I
V
I
R
See Figs. 20a &20b
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
di/dt = 100A/μs
D
D
J
J
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DS
DD
G
GS
DS
= -7.5A
= -1.0A
= 25°C, I
= 25°C, I
= 6.8Ω
= V
= -24V, V
= -24V, V
= -10V, I
= -15V, V
= -15V
= -15V, V
= -25V
= 0V, I
= -10V, I
= -4.5V, I
= -20V
= 20V
= -10V
= 0V
GS
Max.
Max.
100
-7.5
, I
20
50
D
D
S
F
= -250μA
D
D
D
= -25μA
GS
GS
GS
= -2.5A, V
= -2.5A, V
GS
Conditions
Conditions
= -7.5A
= -9.2A
= -7.5A
e
= 0V
= 0V, T
= -4.5V, I
= -4.5V
D
= -1mA
e
e
DD
GS
J
e
= 125°C
www.irf.com
D
= -24V
= 0V
= - 7.5A
Units
Units
°C/W
G
mJ
A
e
D
S