IRF9333PBF International Rectifier, IRF9333PBF Datasheet - Page 5

• Manufacturer Part Number: IRF9333PBF
• Description: MOSFET P-CH 30V 9.2A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9333PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19.4 mOhm @ 9.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 15.6mohm
• Rds(on) Test Voltage Vgs: -10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 32.5 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 9.2 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 14. Maximum Avalanche Energy vs. Drain Current

‚
60
50
40
30
20
10
420
360
300
240
180
120
+
Fig 12. On-Resistance vs. Gate Voltage
-
60
0
2
25
D.U.T
T J = 25°C
4
Starting T J , Junction Temperature (°C)
Fig 17.
-V GS, Gate -to -Source Voltage (V)
*
50
6
ƒ
+
-
•
•
•
•
8
SD
75
10
•
•
•
12
100
-
14
TOP
BOTTOM -7.5A
G
„
T J = 125°C
I D = -9.4A
16
+
125
I D
-2.1A
-3.0A
18
20
+
150
-
Re-Applied
Voltage
Reverse
Recovery
Current
for P-Channel HEXFET
Fig 13. Typical On-Resistance vs. Drain Current
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
1000
800
600
400
200
P.W.
80
70
60
50
40
30
20
10
SD
0
DS
1E-5
Waveform
Waveform
0
Fig 16. Typical Power vs. Time
Ripple ≤ 5%
Body Diode
Period
Body Diode Forward
10
1E-4
Diode Recovery
Current
20
-I D , Drain Current (A)
dv/dt
Forward Drop
di/dt
1E-3
Time (sec)
®
30
Power MOSFETs
D =
V GS = -4.5V
40
1E-2
Period
P.W.
V GS = -10V
50
1E-1
V
V
I
SD
GS
DD
60
=10V
1E+0
70
5