IRF9333PBF International Rectifier, IRF9333PBF Datasheet - Page 3

• Manufacturer Part Number: IRF9333PBF
• Description: MOSFET P-CH 30V 9.2A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9333PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19.4 mOhm @ 9.2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 9.2A
• Vgs(th) (max) @ Id: 2.4V @ 25µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1110pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 15.6mohm
• Rds(on) Test Voltage Vgs: -10V
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOIC
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 32.5 mOhms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 9.2 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 14 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
10000
1000
0.01
100
100
0.1
0.01
10
Fig 3. Typical Transfer Characteristics
100
0.1
Fig 1. Typical Output Characteristics
10
1
1
0.1
1
1.0
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
-V GS , Gate-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
C oss
C rss
C iss
T J = 150°C
2.0
-2.5V
1
≤ 60μs PULSE WIDTH
Tj = 25°C
T J = 25°C
V DS = -15V
≤ 60μs PULSE WIDTH
f = 1 MHZ
10
3.0
10
TOP
BOTTOM
4.0
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
100
100
5.0
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Fig 4. Normalized On-Resistance vs. Temperature
100
1.6
1.4
1.2
1.0
0.8
0.6
0.1
Fig 2. Typical Output Characteristics
10
14
12
10
1
8
6
4
2
0
-60 -40 -20 0
0.1
0
I D = -9.2A
V GS = -10V
I D = -7.5A
-V DS , Drain-to-Source Voltage (V)
T J , Junction Temperature (°C)
Q G Total Gate Charge (nC)
8
1
V DS = -24V
V DS = -15V
V DS = -6.0V
20 40 60 80 100 120 140 160
-2.5V
≤ 60μs PULSE WIDTH
Tj = 150°C
16
10
TOP
BOTTOM
24
VGS
-10V
-5.0V
-4.5V
-4.0V
-3.5V
-3.0V
-2.8V
-2.5V
100
32
3