IRF7207PBF International Rectifier, IRF7207PBF Datasheet - Page 2

• Manufacturer Part Number: IRF7207PBF
• Description: MOSFET P-CH 20V 5.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7207PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
‚
I
I
V
t
Q
Notes:
d(on)
r
d(off)
f
DSS
S
SM
rr
fs
(BR)DSS
GS(th)
GSS
2
iss
oss
rss
g
gs
gd
SD
DS(on)
rr
(BR)DSS
Repetitive rating; pulse width limited by
Starting T
max. junction temperature.
R
G
= 25Ω, I
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
= 25°C, L = 9.6mH
AS
= -5.4A.
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
…
Min. Typ. Max. Units
I
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t<10 sec
T
––– -0.011 –––
–––
–––
-0.7
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
–––
-20
8.3
–––
SD
J
≤ 150°C
≤ -5.4A, di/dt ≤ -79A/µs, V
–––
––– 0.06
––– 0.10
–––
–––
–––
––– -100
–––
780
410
200
–––
2.2
5.7
–––
15
11
24
43
41
42
50
–––
–––
-1.0
100
–––
–––
–––
–––
–––
–––
–––
–––
-1.0
-25
3.3
8.6
22
63
75
43
3.1
V/°C
nC
pF
nC
ns
V
Ω
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz,
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs ƒ
D
D
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
J
J
= -5.4A
= -1.0A
DD
= 25°C, I
= 25°C, I
= 6.0Ω
= 10Ω, „
= 0V, I
= -4.5V, I
= -2.7V, I
= V
= -10V, I
= -16V, V
= -16V, V
= 12V
= -12V
= -10V
= -4.5V, „
= -10V
= 0V
= -15V
≤ V
GS
Conditions
(BR)DSS
, I
D
S
F
D
= -250µA
D
Conditions
D
D
= -3.1A, V
= -3.1A
GS
GS
= -250µA
= -5.4A
= -5.4A „
= -2.7A „
,
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 125°C
= 0V ƒ
G
D
S