IRF7207PBF International Rectifier, IRF7207PBF Datasheet - Page 4

• Manufacturer Part Number: IRF7207PBF
• Description: MOSFET P-CH 20V 5.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7207PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

4
100
1600
1200
0.1
10
800
400
1
0.4
0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
-V
0.6
-V
T = 150 C
SD
J
DS
Forward Voltage
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.7
°
C iss
C oss
C rss
=
=
=
=
0V,
C
C
C
gs
gd
ds
0.9
+ C
+ C
T = 25 C
10
J
f = 1MHz
gd ,
gd
1.1
°
C
ds
V
GS
SHORTED
1.2
= 0 V
1.4
100
100
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0
1
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
A
J
= 25 C
= 150 C
-5.4A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
-V
5
DS
°
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
10
BY R
15
V
10
DS(on)
DS
FOR TEST CIRCUIT
=-10V
SEE FIGURE
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20
100us
1ms
10ms
25
13
100
30