IRF7207PBF International Rectifier, IRF7207PBF Datasheet - Page 3

• Manufacturer Part Number: IRF7207PBF
• Description: MOSFET P-CH 20V 5.4A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7207PBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 780pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
100
100
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
10
10
1
1
0.1
2.0
TOP
BOTTOM
-V
-V
DS
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
GS
, Drain-to-Source Voltage (V)
3.0
T = 25 C
, Gate-to-Source Voltage (V)
J
°
4.0
1
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
T = 150 C
-2.25V
= -10V
J
5.0
°
°
6.0
10
100
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-5.4A
DS
VGS
-7.00V
-5.00V
-4.50V
-3.50V
-3.00V
-2.70V
-2.50V
-2.25V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
20 40 60
1
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
-2.25V
°
V
°
GS
=
-4.5V
-10V
3
10