IRFR6215TRPBF International Rectifier, IRFR6215TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFR6215TRPBF
• Description: MOSFET P-CH 150V 13A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r
• Type: Power MOSFETr

Specifications of IRFR6215TRPBF

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Mounting Type: Surface Mount
• Power - Max: 110W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 66nC @ 10V
• Vgs(th) (max) @ Id: 4V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 13A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 295 mOhm @ 6.6A, 10V
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.295Ohm
• Drain-source On-volt: 150V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 13A
• Power Dissipation: 110W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 580 m Ohms
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 13 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 37 ns
• Gate Charge Qg: 44 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 36 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFR/U6215PbF
4
2000
1600
1200
100
0.1
800
400
10
1
0.2
0
Fig 7. Typical Source-Drain Diode
1
Fig 5. Typical Capacitance Vs.
-V
T = 175°C
-V
Drain-to-Source Voltage
J
SD
DS
0.6
Forward Voltage
C
C
C
V
C
C
C
, Source-to-Drain Voltage (V)
iss
rss
oss
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
= 0V,
= C
= C
= C
gs
ds
gd
1.0
+ C
+ C
10
T = 25°C
J
gd
gd
f = 1MHz
, C
ds
1.4
SHORTED
V
GS
= 0V
1.8
100
A
A
100
20
16
12
10
8
4
0
1
Fig 8. Maximum Safe Operating Area
0
1
T
T
Single Pulse
I
Fig 6. Typical Gate Charge Vs.
D
C
J
= -6.6A
= 25°C
= 175°C
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
DS
Q , Total Gate Charge (nC)
20
G
, Drain-to-Source Voltage (V)
10
V
V
V
DS
DS
DS
BY R
= -120V
= -75V
= -30V
40
DS(on)
FOR TEST CIRCUIT
SEE FIGURE 13
100
www.irf.com
60
10µs
100µs
1ms
10ms
1000
80
A
A