IRFR6215TRPBF International Rectifier, IRFR6215TRPBF Datasheet - Page 5

MOSFET P-CH 150V 13A DPAK

IRFR6215TRPBF

Manufacturer Part Number
IRFR6215TRPBF
Description
MOSFET P-CH 150V 13A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheet

Specifications of IRFR6215TRPBF

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Mounting Type
Surface Mount
Power - Max
110W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
66nC @ 10V
Vgs(th) (max) @ Id
4V @ 250µA
Current - Continuous Drain (id) @ 25° C
13A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
295 mOhm @ 6.6A, 10V
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.295Ohm
Drain-source On-volt
150V
Gate-source Voltage (max)
±20V
Drain Current (max)
13A
Power Dissipation
110W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
DPAK
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
580 m Ohms
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
13 A
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Fall Time
37 ns
Gate Charge Qg
44 nC
Minimum Operating Temperature
- 55 C
Rise Time
36 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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0.01
14
12
10
0.1
8
6
4
2
0
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.10
0.05
0.20
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
(THERMAL RESPONSE)
T , Case Temperature
C
Case Temperature
SINGLE PULSE
75
0.0001
100
125
( C)
t , Rectangular Pulse Duration (sec)
1
°
150
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
10%
90%
V
GS
DS
0.01
t
d(on)
Notes:
1. Duty factor D = t
2. Peak T = P
IRFR/U6215PbF
≤ 0.1 %
t
≤ 1
r
J
DM
x Z
0.1
1
/ t
thJC
2
t
P
d(off)
DM
+ T
C
t
t
1
f
t 2
+
-
5
1
A

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