IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF6216TRPBF
• Description: MOSFET P-CH 150V 2.2A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF6216TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 2.5W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Vgs(th) (max) @ Id: 5V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 2.2A
• Drain To Source Voltage (vdss): 150V
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 1.3A, 10V
• Transistor Polarity: P-Channel
• Drain-source Breakdown Voltage: - 150 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 2.2 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 33 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRF6216
10000
4
1000
100
0.1
10
100
1
10
0.4

Fig 5. Typical Capacitance Vs.
T = 150
Fig 7. Typical Source-Drain Diode
J
1
Drain-to-Source Voltage
-V
SD
°
-V DS , Drain-to-Source Voltage (V)
C
,Source-to-Drain Voltage (V)
0.6
Forward Voltage
V GS = 0V,
C iss
C rss = C gd
C oss = C ds + C gd
10
0.8
= C gs + C gd , C ds

T = 25
Crss
Coss
Ciss
J
f = 1 MHZ
°
C
100

1.0
V
GS
= 0 V
SHORTED
1.2
1000
100
0.1
10
1
12
10
8
6
4
2
0
1
Tc = 25°C
Tj = 150°C
Single Pulse
0
Fig 8. Maximum Safe Operating Area

I
D
Fig 6. Typical Gate Charge Vs.
=
-V DS , Drain-toSource Voltage (V)
-1.3A
5
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10
10
15

V
V
V
DS
DS
DS
= -120V
= -75V
= -30V
20
100
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25
1msec
10msec
100µsec
30
1000
35