IRF6216TRPBF International Rectifier, IRF6216TRPBF Datasheet - Page 6

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IRF6216TRPBF

Manufacturer Part Number
IRF6216TRPBF
Description
MOSFET P-CH 150V 2.2A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6216TRPBF

Package / Case
8-SOIC (3.9mm Width)
Mounting Type
Surface Mount
Power - Max
2.5W
Fet Type
MOSFET P-Channel, Metal Oxide
Gate Charge (qg) @ Vgs
49nC @ 10V
Vgs(th) (max) @ Id
5V @ 250µA
Current - Continuous Drain (id) @ 25° C
2.2A
Drain To Source Voltage (vdss)
150V
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 1.3A, 10V
Transistor Polarity
P-Channel
Drain-source Breakdown Voltage
- 150 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
- 2.2 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
33 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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I
IRF6216
A S
12V
V
Fig 15a&b. Unclamped Inductive Test circuit
6
GS
Fig 14a&b. Basic Gate Charge Test Circuit
0.23
0.22
0.21
0.20
0.19
Same Type as D.U.T.
Current Regulator
Fig 12. On-Resistance Vs. Drain Current
.2 F
0
50K
-3mA
t p
Current Sampling Resistors
.3 F
2
I
G
V
4
D.U.T.
(BR)DSS
I
D
and Waveforms
and Waveform
V GS = -10V
6
+
-
V
DS
-V
8
R
GS
-20V
G
V
D S
V
10
G
t p
Q
GS
I A S
D .U .T
12
0 .01
L
Q
Charge
Q
GD
G
14
D R IV E R
16
18
15V
V D D
A
1.50
1.00
0.50
0.00
Fig 13. On-Resistance Vs. Gate Voltage
500
400
300
200
100
0
4.5
25
Fig 15c. Maximum Avalanche Energy
Starting Tj, Junction Temperature
6.0
-V GS, Gate -to -Source Voltage (V)
50
Vs. Drain Current
7.5
I D = -2.2A
75
9.0
10.5
100

TOP
BOTTOM
www.irf.com
12.0
( C)
°
125
13.5
-1.8A
-3.2A
-4.0A
I D
15.0
150

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