IRF7424PBF International Rectifier, IRF7424PBF Datasheet - Page 2
IRF7424PBF
Manufacturer Part Number
IRF7424PBF
Description
MOSFET P-CH 30V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF7424PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4030pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.0135Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
11A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Channel Type
P
Current, Drain
-11 A
Gate Charge, Total
75 nC
Polarization
P-Channel
Resistance, Drain To Source On
13.5 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
150 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7424PBF
Manufacturer:
MRXMASHSB
Quantity:
20
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics
IRF7424PbF
Notes:
V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
SM
S
rr
d(on)
r
d(off)
f
DSS
fs
(BR)DSS
GS(th)
SD
2
iss
oss
rss
rr
g
gs
gd
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤
max. junction temperature.
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
––– 0.019 –––
–––
–––
-1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 4030 –––
–––
–––
–––
–––
–––
–––
-30
17
Surface mounted on 1 in square Cu board
–––
–––
–––
–––
–––
–––
–––
––– -100
–––
150
580
410
–––
75
14
12
15
23
76
40
47
-1.2
–––
13.5
-2.5
–––
100
110
–––
–––
–––
–––
–––
–––
-15
-25
21
18
22
60
71
2.5
47
V/°C
mΩ
nC
nC
pF
ns
V
V
V
S
di/dt = -100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1.0kHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -11A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 0V, I
= -10V, I
= -4.5V, I
= V
= -10V, I
= -24V, V
= -24V, V
= -20V
= 20V
= -15V
= -10V
= -15V
= -10V
= 0V
= -25V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
D
= -2.5A
= -2.5A, V
D
GS
GS
= -250µA
= -11A
= -11A
= -8.8A
= 0V
= 0V, T
D
www.irf.com
= -1mA
GS
J
= 70°C
G
= 0V
D
S