IRF7424PBF International Rectifier, IRF7424PBF Datasheet

MOSFET P-CH 30V 11A 8-SOIC

IRF7424PBF

Manufacturer Part Number
IRF7424PBF
Description
MOSFET P-CH 30V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Datasheets

Specifications of IRF7424PBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4030pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.0135Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
11A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Channel Type
P
Current, Drain
-11 A
Gate Charge, Total
75 nC
Polarization
P-Channel
Resistance, Drain To Source On
13.5 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
150 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF7424PBF
Manufacturer:
MRXMASHSB
Quantity:
20
l
l
l
l
l
Thermal Resistance
These P-Channel MOSFETs from International
Rectifier utilize advanced processing techniques to
achieve the extremely low on-resistance per silicon
area. This benefit provides the designer with an
extremely efficient device for use in battery and load
management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
Parameter
Parameter
ƒ
ƒ
GS
GS
ƒ
@ -10V
@ -10V
G
S
S
S
V
-30V
DSS
1
2
3
4
Top View
R
HEXFET Power MOSFET
8
6
5
7
DS(on)
13.5@V
IRF7424PbF
-55 to + 150
22@V
Max.
Max.
-9.3
± 20
50
D
D
D
D
-30
-11
-47
2.5
1.6
A
20
GS
max (mW)
GS
= -4.5V
= -10V
SO-8
-8.8A
-11A
mW/°C
Units
Units
I
°C/W
D
°C
V
A
V
1
10/04/04

Related parts for IRF7424PBF

IRF7424PBF Summary of contents

Page 1

... Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com V DSS -30V Top View @ -10V GS @ -10V GS ƒ ƒ ƒ IRF7424PbF HEXFET Power MOSFET R max (mW) I DS(on) D 13.5@V = -10V -11A GS 22@V = -4.5V -8. SO-8 Max. Units -30 V -11 -9.3 A -47 2 ...

Page 2

... IRF7424PbF Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V Breakdown Voltage Temp. Coefficient /∆T (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Q Total Gate Charge g Q Gate-to-Source Charge ...

Page 3

... TOP BOTTOM 100 10 ° 1 0.1 100 Fig 2. Typical Output Characteristics 2 1.5 1.0 0.5 = -15V 0.0 4.5 5.0 -60 -40 -20 Fig 4. Normalized On-Resistance IRF7424PbF VGS -10V -4.5V -3.7V -3.5V -3.3V -3.0V -2.7V -2.5V -2.5V 20µs PULSE WIDTH T = 150 C ° Drain-to-Source Voltage (V) DS -11A ...

Page 4

... IRF7424PbF 6000 1MHz iss rss gd 5000 oss iss 4000 3000 2000 C oss 1000 C rss Drain-to-Source Voltage (V) DS Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 T = 150 C ° ° 0.1 0.4 0.6 0.8 -V ,Source-to-Drain Voltage (V) SD Fig 7. Typical Source-Drain Diode Forward Voltage 4 12 ...

Page 5

... Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com Fig 10a. Switching Time Test Circuit V GS 10% 125 150 ° 90 Fig 10b. Switching Time Waveforms 0.001 0.01 0 Rectangular Pulse Duration (sec) 1 IRF7424PbF - + ≤ 1 ≤ 0 d(on) r d(off Notes: 1. Duty factor ...

Page 6

... IRF7424PbF 0.035 0.030 0.025 0.020 0.015 0.010 2.0 4.0 6.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge Waveform 6 0.030 0.025 0.020 -11A 0.015 0.010 8.0 10.0 0 Fig 13. Typical On-Resistance Vs. 12V V GS Fig 14b. Gate Charge Test Circuit ...

Page 7

... Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 120 100 -250µ 100 125 150 0.001 Fig 16. Typical Power Vs. Time IRF7424PbF 0.010 0.100 1.000 10.000 100.000 Time (sec) 7 ...

Page 8

... IRF7424PbF SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . ...

Page 9

... Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR’s Web site. Visit us at www.irf.com for sales contact information.10/04 IRF7424PbF 12.3 ( .484 ) 11.7 ( .461 ) FEED DIRECTION 14.40 ( .566 ) 12 ...

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