IRF7424PBF International Rectifier, IRF7424PBF Datasheet - Page 3
![MOSFET P-CH 30V 11A 8-SOIC](/photos/5/43/54340/21-8-soic_sml.jpg)
IRF7424PBF
Manufacturer Part Number
IRF7424PBF
Description
MOSFET P-CH 30V 11A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Type
Power MOSFETr
Specifications of IRF7424PBF
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
13.5 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
4030pF @ 25V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.0135Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Drain Current (max)
11A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC
Channel Type
P
Current, Drain
-11 A
Gate Charge, Total
75 nC
Polarization
P-Channel
Resistance, Drain To Source On
13.5 Milliohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
150 ns
Time, Turn-on Delay
15 ns
Transconductance, Forward
17 S
Voltage, Breakdown, Drain To Source
-30 V
Voltage, Drain To Source
-30 V
Voltage, Forward, Diode
-1.2 V
Voltage, Gate To Source
±20 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF7424PBF
Manufacturer:
MRXMASHSB
Quantity:
20
www.irf.com
1000
100
100
0.1
0.1
10
10
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
1
1
0.1
2.5
TOP
BOTTOM
T = 150 C
J
-V
-V
DS
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
3.0
GS
°
, Drain-to-Source Voltage (V)
T = 25 C
, Gate-to-Source Voltage (V)
J
1
3.5
°
-2.5V
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
4.0
J
DS
10
= -15V
°
4.5
100
5.0
1000
Fig 2. Typical Output Characteristics
2.0
1.5
1.0
0.5
0.0
100
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
I =
D
TOP
BOTTOM
-11A
-V
T , Junction Temperature ( C)
DS
VGS
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
-2.5V
J
Vs. Temperature
, Drain-to-Source Voltage (V)
0
1
20 40 60 80 100 120 140 160
IRF7424PbF
-2.5V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
-10V
3
100