IRF6709S2TRPBF International Rectifier, IRF6709S2TRPBF Datasheet - Page 3

MOSFET N-CH 25V 12A DIRECTFET-S1

IRF6709S2TRPBF

Manufacturer Part Number
IRF6709S2TRPBF
Description
MOSFET N-CH 25V 12A DIRECTFET-S1
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF6709S2TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.8 mOhm @ 19A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
20nC @ 4.5V
Input Capacitance (ciss) @ Vds
1810pF @ 13V
Power - Max
2.2W
Mounting Type
Surface Mount
Package / Case
DirectFET™ Isometric S1
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
13.5 mOhms
Drain-source Breakdown Voltage
25 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
39 A
Power Dissipation
21 W
Gate Charge Qg
8.1 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF6709S2TRPBF
Manufacturer:
IR
Quantity:
20 000
ƒ
ˆ
P
P
P
T
T
T
R
R
R
R
R
ƒ Surface mounted on 1 in. square Cu
board (still air).
Absolute Maximum Ratings
Thermal Resistance
Notes:
www.irf.com
P
J
STG
D
D
D
θJA
θJA
θJA
θJC
θJ-PCB
Surface mounted on 1 in. square Cu board, steady state.
Used double sided cooling, mounting pad with large heatsink.
T
@T
@T
@T
C
measured with thermocouple incontact with top (Drain) of part.
A
A
C
= 25°C
= 70°C
= 25°C
0.01
100
0.1
10
1
1E-006
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.01
0.02
Power Dissipation
Power Dissipation
Power Dissipation
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
(At lower pulse widths Zth
0.0001
fl
f
jl
kl
l
Parameter
Parameter
Ã
0.001
t 1 , Rectangular Pulse Duration (sec)
‰ Mounted on minimum footprint full size board with metalized
τ
1
Ci= τi/Ri
τ
1
Ci= τi/Ri
back and with small clip heatsink. (still air)
R
1
R
1
0.01
JA
τ
2
R
τ
& Zth
Š
2
2
R
2
back and with small clip heatsink.
Mounted on minimum footprint full size board with metalized
R
R
τ
θ
3
3
R
τ
3
3
JC
is measured at
τ
are combined)
R
4
τ
0.1
4
R
4
4
τ
R
5
τ
5
R
5
5
τ
R
6
τ
6
R
6
6
T
τ
R
7
1
J
τ
7
R
7
7
Typ.
of approximately 90°C.
12.5
–––
–––
1.0
20
τ
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
R
8
τ
8
R
8
8
-55 to + 175
R
9
R
9
Max.
0.012
τ
10
A
270
1.8
1.3
τ
21
A
4.48E+00
2.96E+00
1.23E+01
3.63E+01
2.45E+01
Ri (°C/W)
3.82E-03
2.77E-01
6.99E-01
2.47E-01

Max.
–––
–––
–––
7.2
82
100
2.39E+00
1.58E+00
6.58E+00
1.94E+01
2.04E-03
1.48E-01
3.72E-01
1.32E-01
τi (sec)
13.06
1000
Units
Units
°C/W
W/°C
°C
W
3

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